fanfelle@iris.ucdavis.EDU (Rob Fanfelle) (11/14/90)
Hi again,
With some help (thanks Jeff and Brian) I have successfully
created an electrical parameters file for use with IRSIM.
The procedure was not very difficult but I would like to
make the file available for everyone.
I obtained the process parameters for a recent hp 1.2u run
from MOSIS and used the data to build the .prm file.
For those who are unaware, if you are using IRSIM v8.x (included
with the latest release of Magic [Berkeley/DEC v6.x]), you
will need a file similar to this to simulate designs extracted
with scmos 1.2um design rules. (ie. extract style lambda=0.6)
Note:
This file applies only if you are using ext2sim to produce
your .sim files. Also if you use non-minimum LENGTH transistors
in key timing paths, then you should use a more accurate
version of this file with tabled resistance entries. (Since
resistances dont scale linearly for processes that experience
short-channel effects [ie. velocity saturation])
With that in mind, here it is. Good Luck.
Rob
I named this file "scmos1_2um.prm"
------------------------Cut-------------------------------
; configuration file for scmos with lamba = 1.0 (1.2um process)
; parameters extracted from spice BSIM models for use with ext2sim.
;
capga .001731 ; gate capacitance -- area, pf/sq-micron
; used Tox = 203 A - see later comments
lambda 0.6 ; microns/lambda
lowthresh 0.4 ; logic low threshold as a normalized voltage
highthresh 0.6 ; logic high threshold as a normalized voltage
cntpullup 0 ; irrelevant, cmos technology; no depletion transistors
diffperim 0 ; don't include diffusion perimeters for sidewall cap.
subparea 0 ; poly over transistor won't count as part pf bulk-poly cap.
diffext 0 ; diffusion extension for each transistor
; The following are based on run# N05G/GENE hp_1.2um date:7-17-90
; the MOSIS BSIM models were used with spice3c1 and the command "getres"
; n-channel resistance
resistance n-channel dynamic-high 10.0 1.2 2060.0
resistance n-channel dynamic-low 10.0 1.2 1102.0
resistance n-channel static 10.0 1.2 898.0
; p-channel resistance
resistance p-channel dynamic-high 16.0 1.2 1812.0
resistance p-channel dynamic-low 16.0 1.2 3716.0
resistance p-channel static 16.0 1.2 1884.0