[comp.lsi] Interconnect modelling

ekwok@mipos3.UUCP (06/30/87)

I realize that my previous posting looking for pointers to interconnect 
modelling may be too broad, so I am trying to narrow down to specific areas
which is most immediately interesting to me. 

Specifically, I am studying the following issues:

1. estimates must be related to layout information. Is an estimate based on
   the number of fan-outs and not taking into account the geometry of 
   the interconnect too crude for delay modelling?

2. Finite element analysis is too refined. Computation complexity for each
   configuration may be too expensive for analysis over all pieces of 
   interconnect for a typical chip of the 100K+ devices complexity.
   Is there a simpler method?

3. traditional assumptions: that device output RC can be modelled by 
   pullup/pulldown resistance of device and capacitance of 
   interconnect, are they still valid (i.e. ignoring resitance in the 
   interconnect) in technologies anticipated in the reasonably near future?

4. Does reliability concerns, such as electromigration design rules or 
   modeling manufacturing defects (e.g. pin-holes) benefit from accurate
   models of interconnect?

5. Modelling contacts, in the same spirit as 2. What are the valid assumptions
   in the near term technologies (taking into consideration trends of
   relative resistivities of polysilicon and metals (- aluminum alloys?))?

If you know about any publications relevant, or if you are currently working
on any of these problems, I would like to learn from you.

Again, mail path:

{rest of world}!{hplabs,qantel,amdcad,decwrl}!intelca!mipos3!cadev2!ekwok

reach out: 408-9877497.

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