sllu@venera.isi.edu (Lien Lu) (07/06/88)
This is to announce a a new release of the scmos.tech for Magic (Berkeley tool). This version of the scmos.tech (v3.1) covers the MOSIS rev.6 Scalable CMOS design rules. It has a smarter CIF output section in generating select layers. As a result ohmic layers can be closer to the transistors in this version of the tech file. Layouts done with an earlier release (v3.0) should have no DRCs violations when read into this version of the tech file. This version of the tech file also contains some updates to the extraction section. To obtain a copy of the new scmos.tech, send a message to mosis@mosis.edu which contains: REQUEST: INFORMATION TOPIC: SCMOS.TECH REQUEST: END Free feel to send me (sllu@mosis.edu) or mosis (mosis@mosis.edu) e-mail if there are questions. Shih-Lien Lu for MOSIS
sllu@venera.isi.edu (Shih-Lien Lu) (11/12/88)
MOSIS has announced the new double poly/double metal 2um pwell process. The first run is scheduled to close on 11/17/88. A prelim version of the tech file is ready for Magic users. It is a prelim version since we have not had design done with this tech file. You may obtain the tech from MOSIS by sending a REQUEST message to mosis@mosis.edu and ask for SCMOS.TECH. With this tech file, you need to recompile Magic after increasing the constant value TT_MAXTYPE in the file "database.h". Shih-Lien Lu sllu@mosis.edu