rick@cs.arizona.edu (Rick Schlichting) (05/21/91)
[Dr. David Kahaner is a numerical analyst visiting Japan for two-years
under the auspices of the Office of Naval Research-Asia (ONR/Asia).
The following is the professional opinion of David Kahaner and in no
way has the blessing of the US Government or any agency of it. All
information is dated and of limited life time. This disclaimer should
be noted on ANY attribution.]
[Copies of previous reports written by Kahaner can be obtained from
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To: Distribution
From: David K. Kahaner ONR Asia [kahaner@xroads.cc.u-tokyo.ac.jp]
Re: 9th Symposium on Future Electron Devices, Nov 14-15 1990, Chiba Japan.
20 May 1991
ABSTRACT. Titles and authors of papers presented at "9th Symposium on
Future Electron Devices, Nov 14-15 1990, at Chiba Japan are given.
INTRODUCTION
During November 14-15, 1990, the "9th Symposium on Future Electron
Devices" was held at the Nippon Convention Center, Makuhari, Chiba,
Japan. The symposium was sponsored by the Research and Development
Association for Future Electron Devices, and the Japan Industrial
Technology Association. I am not following hardware device technology,
nor did I attend the symposium, but these papers looked sufficiently
interesting to justify passing their names on to readers. Please notice
the strong interest in three-dimensional ICs and bioelectronic devices.
SCIENCE & TECHNOLOGY JAPAN
9TH SYMPOSIUM ON FURURE ELECTRON DEVICE
November 14-15, 1990
Nippon Convention Center, Makuhari, Chiba, Japan
Session I: Plenary Session
Chairperson: K. Yoneda (Sanyo Electric)
Historical View of Electronic Device Research - Basis for International
Cooperation (Invited)
M. Kikuchi (Tokai University, Sony)
Novel Approaches to Electronic Devices (Invited)
W.F. Brinkman (AT&T Bell Laboratories)
Introduction of Future Electron Device Projects
T. Sakamoto (R&D Association for Future Electron Devices)
Session IIA: High-Temperature Superconducting Electron Devices
Chairperson: T. Fujita (Hiroshima University)
Introduction to High-Temperature Superconducting Electron Device Project
T. Ikeda (R&D Association for Future Electron Devices)
Crystal Growth, Structure and Properties of High-Tc Superconducting Ultrathin
Films (Invited)
Y. Bando, T. Terashima, K. Iijima, K. Yamamoto, K. Hirata, K. Hayashi, K.
Kamigaki, H. Terauchi (Kyoto University)
Heteroepitaxial Growth of Oxide Superconductors and Electronic Applications
(Invited)
T. Kobayashi, K. Sakuta, Y. Fujiwara (Osaka University)
Exploratory Study of Superconducting Resonant Tunneling Transistor
H. Tamura, A. Yoshida, H. Takauchi, S. Hasuo (Fujitsu)
Chairperson: Y. Okabe (The University of Tokyo)
High Temperature Superconducting Films and Devices (Invited)
H. Hayakawa, A. Fujimaki, Y. Takai (Nagoya University)
Contact Resistance in High-Tc Superconductor/Metal Interface
I. Takeuchi, J.S. Tsai, S. Miura, T. Yoshitake, H. Tsuge (NEC)
Session IIB: High-Temperature Superconducting Electron Devices
Chairperson: T. Goto (The University of Electro-Communications)
Tunneling Characteristics of YBaCuO Thin Film Josephson Junctions (Invited)
I. Iguchi (University of Tsukuba)
Prospect of Charge-Quantum Field-Effect Transistor Using Superconductor
(Invited)
M. Sugahara, N. Yoshikawa, T. Akeyoshi, S. Furuya, L. Zhang (Yokohama
National University)
Basic Study for Formation of High Tc Superconductor/Semiconductor Junctions
Y. Yamada, M. Ogiwara, T. Tsuruoka, H. Abe (Oki Electric Industry)
Chairperson: T. Yamashita (Nagaoka University of Technology)
Device Processes toward Superconducting Three-Terminal Devices Using Bi-System
Single Crystals
Y. Yoshisato, T. Usuki, K. Takahashi, S. Nakano (Sanyo Electric)
Proximity Junctions on YBCO Thin Films
J. Yoshida, T. Hashimoto, S. Inoue, M. Sagoi, K. Mizushima (Toshiba)
Preliminary Investigations of Superconducting Proximity Effects Devices
Y. Tarutani, T. Fukazawa, S. Saitoh, M. Okamoto, K. Takagi (Hitachi)
Panel Discussion: Future Prospect on High-Tc Superconducting Electronics
Chairperson: S. Takada (Electrotechnical Laboratory)
Session III: Superlattice Devices
Nanoelectronics (Invited)
J.N. Randall (Texas Instruments)
Introduction of Superlattice Device Project
K. Ogasawara (R&D Association for Future Electron Devices)
Tunneling Phenomena in Quantum Well Structures (Invited)
N. Sawaki (Nagoya University)
Research and Development of Superlattice Devices at Electrotechnocal
Laboratory (Invited)
S. Yoshida (Electrotechnocal Laboratory)
Chairperson: H. Sakaki (The University of Tokyo)
Fabrication of Si PBT and Evaluation of Its High Frequency Performance
T. Oshima, N. Nakamura, K. Nakagawa, K. Yamaguchi, M. Miyao (Hitachi)
Fabrication and Characterization of InAs/GaAs Superlattice Pseudomorphic HEMTs
N. Nishiyama, H. Yano, S. Nakajima, H. Hayashi (Sumitomo Electric)
Room Temperature Operation of GaSb/InAs Hot Electron Transistors Grown by
Metalorganic Chemical Vapor Deposition
K. Taira, F. Nakamura, K. Funato, I. Hase, K. Kawai, Y. Mori (Sony)
Improved RHET Performance by Using New Collector Barrier Structures and
Fabrication of RHET Logic Gates
K. Imamura, H. Ohnishi, T. Mori, M. Takatsu, S. Muto, N. Yokoyama, A.
Shibatomi (Fujitsu)
Session IVA: Bioelectronic Devices
Chairperson: M. Aizawa (Tokyo Institute of Technology)
Introduction of Bioelectronic Devices Project
Y. Kondo (R&D Association for Future Electron Devices)
Cerebellar Synaptic Plasticity Evoked by Endogenous Nitric Oxide Release
(Invited)
K. Shibuki (RIKEN)
Chairperson: G. Matsumoto (Electrotechnical laboratory)
An Optical System for Real-time Imaging of Neural Activities of the Brain at
128x128 Sites (Invited)
M. Ichikawa, G. Matsumoto (Electrotechnical Laboratory)
Modeling of Visual Information Processing
K. Okajima, M. Nomura, G. Bugmann, S. Fujiwara (NEC)
Articulated Robot Arm Control by a Cerebellar Network Model
S. Hosogi, K. Matsuo, N. Watanabe, M. Sekiguchi, S. Nagata, K. Asakawa,
M. Ishii (Fujitsu)
Session IVB: Bioelectronic Devices
Chairperson: T. Moriizumi (Tokyo Institute of Technology)
Recent Progress of Research on Metal Complexes: New Materials and Artificial
Structures (Invited)
H. Tanino (Electrotechnocal Laboratory)
Photo-switching of Visual Cell System (Invited)
H. Tachibana, T. Nakamura, M. Matsumoto, M. Tanaka, Y. Kawabata (National
Chemical Laboratory for Industry)
Chairperson: T. Akaike (Tokyo Institute of Technology)
Problems in Three-Dimentional Structural Analysis of Proteins (Invited)
K. Morikawa, Y. Fujiyoshi (Protein Engineering Research Institute)
Chairperson: H. Nakahara (Saitama University)
A Photosensitive Device Model Using High-Specific Protein Assembling Units of
Antibody
T. Ishibashi, S. Yoshino, S. Imazeki, N. Shimizu (Hitachi)
Electric Properties of Flavin-Porphyrin Molecular Heterojunction and their
Application to an Artificial Vision Device
S. Ueyama, S. Isoda, H. Kawakubo, Y. Hanazato, K. Inatomi, O. Wada, M.
Kataoka, I. Karino, M. Maeda (Mitsubishi Electric)
Development of Visual Information Processing Devices Using Photo-sensitive
Proteins
A. Mizukami, Y. Sugiyama, K. Saitoh, M. Ikematsu, K. Kuhara (Sanyo
Electric)
Chairperson: S. Kuroda (Electrotechnical Laboratory)
Development of an Artificial Neural Device Composed of Functional Organic
Molecules
A. Taomoto, K. Nichogi (Matsushita Res. Inst.)
Development of Sensory Information Processing Device Using Organic Films
A. Miyata, Y. Unuma, Y. Higashigaki, Y. Katsuya, H. Akiyama, S. Miyoshi
(Sharp)
Development of Photoelectric Devices Using Porphyrin LB Films
M. Yoneyama, A. Fujii, T. Nagao, H. Tanaka, T. Murayama (Mitsubishi
Kasei)
Session V: Three-Dimensional ICs
Chairperson: H. Ishiwara (Tokyo Institute of Technology)
Introduction of Three-Dimensional ICs Project
T. Watanabe (R&D Association for Future Electron Devices)
Research on Basic Technologies for Three-Dimensional Integrated Circuit at ETL
(Invited)
K. Shimizu (Electrotechnical Laboratory)
Transmission Electron Microscopic Observation of Defects in a Multi-layer-
stacked Structure Fabricated by Solid Phase Epitaxy
H. Ogata, S. Nakanishi, K. Kawai (Sanyo Electric)
Large Area Recrystallization of a Multi-layered SOI and a Study of 1/4 um SOI
MOSFETs
S. Kambayashi, M. Yoshimi, M. Kemmochi, H. Itoh, M. Takahashi, Y.
Takahashi, H. Niiyama, S. Onga, H. Okano, K. Natori (Toshiba)
LED Arrays Stacked on GaAs MESFETs on Si Substrates
T. Ueda (Oki Electric)
Chairperson: K. Hoh (Yokohama National University)
Study of Lithography Using the SORTEC 1 GeV Synchrotron Radiation Source
Facility (Invited)
K. Okada, M. Kodaira, K. Matsuo, T. Kishimoto, K. Yanagida (SORTEC)
Comparison of SOI Device Performance (Invited)
K. Taniguchi (Osaka University)
Evaluation of CUBIC (C Umulatively Bonded IC) Device
Y. Hayashi (NEC)
Chairperson: T. Tokuyama (University of Tsukuba)
Design and Implementation of a Four-Stody Structured Image Processing Sensor
K. Kioi, T. Shinozuka, S. Toyoyama, K. Shirakawa, K. Ohtake, S.
Tsuchimoto (Sharp)
4-Layer 3-D Image Processing IC
K. Yamazaki, Y. Itoh, A. Wada, K. Morimoto, Y. Tomita (Matsushita
Electric)
Evaluation of SOI Devices and the 4-Layer 3-D IC with a Range Sensor
Capability
Y. Inoue, K. Sugahara, T. Nishimura (Mitsubishi Electric)
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