sllu@jenny.isi.edu (Shih-Lien Lu) (12/08/90)
Archive-name: lsi/models/npn.mag/1990-12-06 Archive: vlsi-cad.isi.edu:/npn.mag [128.9.0.35] Original-posting-by: sllu@jenny.isi.edu (Shih-Lien Lu) Original-subject: Re: NPN device characteristics in SCNA20? Reposted-by: emv@ox.com (Edward Vielmetti) In article <1990Dec6.164058.7650@cs.umn.edu> jkennedy@umn-cs.cs.umn.edu (Joel Kennedy) writes: >Hello, I would like to consider having something fabricated >using the NPN devices available on the SCNA20 MOSIS process >and would like to know more about what properties they have. >1) Is there any "example" transistor with Spice models > available through MOSIS mail requests? >2) Has anybody else done this? What sort of Rc, etc, was > found? >3) Any other advice/warnings/etc would be appreciated. Thanks. > >Joel Kennedy >kennedy@ee.umn.edu (1) FTP from "vlsi-cad.isi.edu" using "anonymous" as login with any password the file "npn.mag". I have put a prelim. model file "bipolar.mod" there also. REMEBER this is PRELIMINARY DATA. (2) You may use the model file to find the Rc of the corresponding NPN transistors with SPICE. (3) One lesson we have learned: Do not use the minimum sized NPN transistor as depicted in the MOSIS' design rule file. Shih-Lien Lu sllu@mosis.edu