davidt@psuhcx (Thomas S. David) (01/01/89)
Hi there netlanders.... I've got a question for all you VLSI people out there....The question I have has to do with Poly connections on CMOS chips...How does one get over the problem of creating a PN junction when one connects a P and N device through the Poly (the problem being that when the active region doping is done, the poly, if it is'nt covered with photoresist, will get doped too thus creating a P poly and an N poly)..? I realise that there are many ways of getting over this little problem..... ie: predope the Poly either N or P or run the Poly interconnect through a metal layer to avoid the PN junction problem... What I'm specifically interested in is what is done out there in industry to combat this problem... As the organization line in the header says I'm just a lowly grad student (still in school unfortunately...:-)).... Thanks in advance..... Tom... E-mail addresses... ------------------- dst@ecl.psu.edu or davidt@hcx.psu.edu or dst@psuecl or psuvax1!hcx.psu.edu!davidt or davidt@psuhcx or t1d@psuecl2 or guhas@ei.ecn.purdue.edu